| PART |
Description |
Maker |
| IPB020N10N5LF |
OptiMOSTM 5 Linear FET, 100 V
|
Infineon Technologies A...
|
| NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET
HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
| IPD068P03L3G |
OptiMOSTM P3 Power-Transistor
|
Infineon Technologies AG
|
| BSC032N04LS |
OptiMOSTM Power-MOSFET, 40 V
|
Infineon Technologies A...
|
| BSC039N06NS-12 |
OptiMOSTM Power-Transistor
|
Infineon Technologies A...
|
| BSC065N06LS5 |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| BSC094N06LS5 |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| BSZ240N12NS3G |
OptiMOSTM 3 Power-Transistor
|
Infineon Technologies AG
|
| IPT012N06N |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| CA2832C CA2832 |
35.5 dB 1-200 MHz 1.6 WATT WIDEBAND LINEAR AMPLIFIER
|
Motorola, Inc.
|
